Si7386DP
Vishay Siliconix
N-Channel Reduced Q g , Fast Switching MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.007 at V GS = 10 V
0.0095 at V GS = 4.5 V
I D (A)
19
17
Q g (Typ.)
11.5
?
?
?
?
Halogen-free available
TrenchFET ? Gen II Power MOSFET
PWM Optimized for High Efficiency
New Low Thermal Resistance PowerPAK ?
RoHS
COMPLIANT
Package with Low 1.07 mm Profile
? 100 % R g Tested
PowerPAK SO-8
APPLICATIONS
? DC/DC Conversion for PC
6.15 mm
1
S
2
S
S
5.15 mm
D
D
3
4
G
8
D
7
6
D
D
G
5
Bottom View
Ordering Information: Si7386DP-T1-E3 (Lead (Pb)-free)
Si7386DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Avalanche Current
Single Pulse Avalanche Energy
T A = 25 °C
T A = 70 °C
L = 0.1 mH
I D
I DM
I S
I AS
E AS
19
16
4.1
± 50
25
32
12
9
1.5
A
mJ
Soldering Recommendations (Peak Temperature)
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
b, c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
5
3.2
- 55 to 150
260
1.8
1.1
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET) a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
21
56
2.4
25
70
3.0
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( h ttp://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73108
S-80439-Rev. C, 03-Mar-08
www.vishay.com
1
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相关代理商/技术参数
SI7388DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel Reduced Qg, Fast Switching MOSFET
SI7388DP-T1 制造商:Vishay Siliconix 功能描述:
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SI7390DP-T1-GE3 功能描述:MOSFET 30V 15A 5.0W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube